TN0201T siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-52426erev. d, 14-apr-97 siliconix was formerly a division of temic semiconductors 1 n-ch enhancement-mode mosfet transistor
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20 1.0 @ v gs = 10 v 10 to30 039 20 1.4 @ v gs = 4.5 v 1 . 0 to 3 . 0 0 . 39 low on-resistance: 0.75 low threshold: <1.75 v low input capacitance: 65 pf fast switching speed: 15 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays *marking code for to-236 g to-236 (sot-23) s d top view 2 3 1 TN0201T (n1)*
drain-source voltage v ds 20 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) t a = 25 c i d 0.39 continuous drain current (t j = 150 c) t a = 70 c i d 0.25 a pulsed drain current a i dm 0.75 power dissi p ation t a = 25 c p d 0.35 w power dissi ation t a = 70 c p d 0.22 w maximum junction-to-ambient r thja 357 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70200.
siliconix TN0201T vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-52426erev. d, 14-apr-97 siliconix was formerly a division of temic semiconductors 2
drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 20 40 v gate-threshold voltage v gs(th) v ds = v gs , i d = 0.25 ma 1.0 1.90 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 14 v, v gs = 0 v, t j = 55 c 10 a on-state drain current c i d(on) v ds = 10 v, v gs = 10 v 0.5 0.75 a drain - source on - resistance c r ds(on) v gs = 4.5 v, i d = 0.1 a 1 1.4 drain source on resistance r ds(on) v gs = 10 v, i d = 0.3 a 0.75 1.0 forward transconductance c g fs v ds = 10 v, i d = 0.2 a 450 ms diode forward voltage v sd i s = 0.3 a, v gs = 0 v 0.85 v
total gate charge q g 1400 gate-source charge q gs v ds = 16 v, v gs = 10 v i d 0.3 a 300 pc gate-drain charge q gd d 200 input capacitance c iss 65 output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 mhz 35 pf reverse transfer capacitance c rss 6
turn - on time t d(on) 5 turn - on time t r v dd = 15 v, r l = 50 i d 03a v gen =10v 10 ns turn - off time t d(off) i d 0 . 3 a , v gen = 10 v r g = 6 12 ns turn - off time t f 6 notes a. t a = 25 c unless otherwise noted. vnbp02 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
TN0201T siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-52426erev. d, 14-apr-97 siliconix was formerly a division of temic semiconductors 3
0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 *)&*) ') '!()!( '$( ' ') '!()!( $, (!()$ +( ) ,%*' %") $, (!()$ +( '!$ *'' $) v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7, 6 v 3 v 5 v 4 v v gs gate-to-source voltage (v) drain current (a) i d t j = 125 c 55 c i d drain current (a) v gs gate-to-source voltage (v) 0 0.4 0.8 1.2 1.6 2.0 2.4 0 4 8 12 16 20 0 0.3 0.6 0.9 1.2 1.5 0 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 2 v 25 c i d @ 300 ma v gs = 4.5 v v gs = 10 v $, (!()$ +( *$)!%$ #& ')*' (normalized) t j junction temperature ( c) 0.65 0.85 1.05 1.25 1.45 1.65 50 25 0 25 50 75 100 125 150 v gs = 10 v @ 300 ma v gs = 4.5 v @ 100 ma ' ( %" %") '!$ + ' #& ')*' variance (v) v gs(th) 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 25 0 25 50 75 100 125 150 i d = 250 a t j junction temperature ( c) r ds(on) onresistance ( ) r ds(on) onresistance ( ) r ds(on) onresistance ( ) w
siliconix TN0201T vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-52426erev. d, 14-apr-97 siliconix was formerly a division of temic semiconductors 4
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"$'$ " % v sd source-to-drain voltage (v) source current (a) i s 0.001 10.0 0.010 0.100 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d = 250 a % $ gate-to-source voltage (v) q g total gate charge (pc) v gs 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 v ds = 16 v i d = 300 ma # %! v ds drain-to-source voltage (v) c capacitance (pf) 0 20 40 60 80 100 120 140 0 4 8 12 16 20 c rss c oss c iss t j = 125 c 25 c
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